Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.
Identifieur interne : 000292 ( Main/Exploration ); précédent : 000291; suivant : 000293Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.
Auteurs : RBID : pubmed:23669918English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Phosphines, Silicon.
- instrumentation : Refractometry, Surface Plasmon Resonance.
- Electric Conductivity, Equipment Design, Equipment Failure Analysis, Lasers, Systems Integration.
Abstract
We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.
PubMed: 23669918
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Pauline.Mechet@intec.ugent.be</nlm:affiliation><country xml:lang="fr">Belgique</country><wicri:regionArea>1imec - Ghent University, Photonics Research Group, Department of Information Technology, INTEC, Sint-Pietersnieuwstraat 41, 9000 Ghent</wicri:regionArea></affiliation></author><author><name sortKey="Raineri, F" uniqKey="Raineri F">F Raineri</name></author><author><name sortKey="Bazin, A" uniqKey="Bazin A">A Bazin</name></author><author><name sortKey="Halioua, Y" uniqKey="Halioua Y">Y Halioua</name></author><author><name sortKey="Spuesens, T" uniqKey="Spuesens T">T Spuesens</name></author><author><name sortKey="Karle, T J" uniqKey="Karle T">T J Karle</name></author><author><name sortKey="Regreny, P" uniqKey="Regreny P">P Regreny</name></author><author><name sortKey="Monnier, P" uniqKey="Monnier P">P Monnier</name></author><author><name sortKey="Van Thourhout, D" uniqKey="Van Thourhout D">D Van Thourhout</name></author><author><name sortKey="Sagnes, I" uniqKey="Sagnes I">I Sagnes</name></author><author><name sortKey="Raj, R" uniqKey="Raj R">R Raj</name></author><author><name sortKey="Roelkens, G" uniqKey="Roelkens G">G Roelkens</name></author><author><name sortKey="Morthier, G" uniqKey="Morthier G">G Morthier</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:23669918</idno><idno type="pmid">23669918</idno><idno type="wicri:Area/Main/Corpus">000619</idno><idno type="wicri:Area/Main/Curation">000619</idno><idno type="wicri:Area/Main/Exploration">000292</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric Conductivity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Indium (chemistry)</term><term>Lasers</term><term>Phosphines (chemistry)</term><term>Refractometry (instrumentation)</term><term>Silicon (chemistry)</term><term>Surface Plasmon Resonance (instrumentation)</term><term>Systems Integration</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Phosphines</term><term>Silicon</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Refractometry</term><term>Surface Plasmon Resonance</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electric Conductivity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Lasers</term><term>Systems Integration</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23669918</PMID><DateCreated><Year>2013</Year><Month>05</Month><Day>14</Day></DateCreated><DateCompleted><Year>2014</Year><Month>01</Month><Day>06</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>21</Volume><Issue>9</Issue><PubDate><Year>2013</Year><Month>May</Month><Day>6</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.</ArticleTitle><Pagination><MedlinePgn>10622-31</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.21.010622</ELocationID><Abstract><AbstractText>We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Mechet</LastName><ForeName>P</ForeName><Initials>P</Initials><Affiliation>1imec - Ghent University, Photonics Research Group, Department of Information Technology, INTEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium. Pauline.Mechet@intec.ugent.be</Affiliation></Author><Author ValidYN="Y"><LastName>Raineri</LastName><ForeName>F</ForeName><Initials>F</Initials></Author><Author ValidYN="Y"><LastName>Bazin</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Halioua</LastName><ForeName>Y</ForeName><Initials>Y</Initials></Author><Author ValidYN="Y"><LastName>Spuesens</LastName><ForeName>T</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Karle</LastName><ForeName>T J</ForeName><Initials>TJ</Initials></Author><Author ValidYN="Y"><LastName>Regreny</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Monnier</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Van Thourhout</LastName><ForeName>D</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Sagnes</LastName><ForeName>I</ForeName><Initials>I</Initials></Author><Author ValidYN="Y"><LastName>Raj</LastName><ForeName>R</ForeName><Initials>R</Initials></Author><Author ValidYN="Y"><LastName>Roelkens</LastName><ForeName>G</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Morthier</LastName><ForeName>G</ForeName><Initials>G</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical><Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber><NameOfSubstance>Silicon</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Lasers</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Refractometry</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Plasmon Resonance</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Systems Integration</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>5</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>5</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">253016</ArticleId><ArticleId IdType="pubmed">23669918</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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